Crystal growth and differential thermal analysis of AgGaSe2

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	Crystal growth and differential thermal analysis of AgGaSe2
	S. F. Zhu; J. Liu; B. J. Zhao; H. A. Jiang; Z. H. Li
	1995
发表期刊	Crystal Research and Technology
ISSN	0232-1300
卷号	30 期号:8 页码:1165-1168
摘要	High quality AgGaSe2 single crystals with 20 mm in diameter and 55 mm in length have been grown by Bridgman technique. It is found that there is a second phase of Ag-rich Ga2Se3 (or named AgGa7Se11) in the AgGaSe2 crystal. It is concluded by discussions with the DTA results and the phase diagram that single crystals grown from polycrystalline materials with stoichiometric composition must contain a second phase of Ag-rich Ga2Se3. This result is helpful for the heat treatment, in which what and how much is added and what temperature is chosen for the heat treatment, are very important.
部门归属	acad sinica,int ctr mat phys,shenyang,peoples r china.;zhu, sf (reprint author), sichuan univ,dept mat sci,chengdu 610064,peoples r china
关键词	Infrared Applications Optical-quality
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38784
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. F. Zhu,J. Liu,B. J. Zhao,et al. Crystal growth and differential thermal analysis of AgGaSe2[J]. Crystal Research and Technology,1995,30(8):1165-1168.
APA	S. F. Zhu,J. Liu,B. J. Zhao,H. A. Jiang,&Z. H. Li.(1995).Crystal growth and differential thermal analysis of AgGaSe2.Crystal Research and Technology,30(8),1165-1168.
MLA	S. F. Zhu,et al."Crystal growth and differential thermal analysis of AgGaSe2".Crystal Research and Technology 30.8(1995):1165-1168.