EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS

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	EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS
	W. Deng; L. Y. Xiong; S. H. Wang; J. T. Guo; C. W. Lung
	1994
发表期刊	Journal of Materials Science Letters
ISSN	0261-8028
卷号	13 期号:5 页码:313-315
部门归属	acad sinica,inst met res,shenyang 110015,peoples r china.;deng, w (reprint author), acad sinica,int ctr mat phys,shenyang 110015,peoples r china
关键词	Intergranular Fracture Grain-boundaries Boron Sulfur Segregation Microscope Model
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38806
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. Deng,L. Y. Xiong,S. H. Wang,et al. EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS[J]. Journal of Materials Science Letters,1994,13(5):313-315.
APA	W. Deng,L. Y. Xiong,S. H. Wang,J. T. Guo,&C. W. Lung.(1994).EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS.Journal of Materials Science Letters,13(5),313-315.
MLA	W. Deng,et al."EFFECT OF B ON ELECTRONIC DENSITIES OF DEFECTS AND BULK IN NI3AL ALLOYS".Journal of Materials Science Letters 13.5(1994):313-315.