CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING

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	CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING
	S. X. Jin; M. H. Yuan; L. P. Wang; H. Z. Song; H. P. Wang; G. G. Qin
	1994
发表期刊	Science in China Series a-Mathematics Physics Astronomy
ISSN	1001-6511
卷号	37 期号:6 页码:730-737
摘要	Hydrogen can decrease the Schottky barrier height (SBH) of Ti/n diodes as much as 0.18 eV. Zero bias annealing (ZBA) makes the SBHs of Ti/n-GaAs diodes containing hydrogen decrease and reverse bias annealing (RBA) makes them increase. When RBA at 100-degrees-C lasts for 2 h or more, the SBHs haw a one-to-one correlation with the biases of RBA and the larger the bias applied, the higher the SBH is.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;jin, sx (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词	Schottky Barrier (Sb) Metal-semiconductor (Ms) Interfaces Hydrogen Zero Bias Annealing (Zba) Reverse Bias Annealing (Rba) Unified Defect Model Crystalline Semiconductors States
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38829
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. X. Jin,M. H. Yuan,L. P. Wang,et al. CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING[J]. Science in China Series a-Mathematics Physics Astronomy,1994,37(6):730-737.
APA	S. X. Jin,M. H. Yuan,L. P. Wang,H. Z. Song,H. P. Wang,&G. G. Qin.(1994).CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING.Science in China Series a-Mathematics Physics Astronomy,37(6),730-737.
MLA	S. X. Jin,et al."CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING".Science in China Series a-Mathematics Physics Astronomy 37.6(1994):730-737.