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ELECTRICAL-RESISTIVITY OF NANOCRYSTALLINE FE-CU-SI-B ALLOYS
X. D. Liu; K. Lu; B. Z. Ding; Z. Q. Hu; Y. Z. Wang
1994
发表期刊Acta Physica Sinica-Overseas Edition
ISSN1004-423X
卷号3期号:6页码:426-430
摘要We have studied the room temperature and low-temperature electrical resistivities of nanocrystalline Fe-Cu-Si-B alloys with various grain sizes prepared by crystallization of amorphous material. Experimental results showed that with the reduction of grain size both room temperature resistivity rho(RT) and residual resistivity rho0 of the nanostructured alloys studied increased significantly. Based on the scattering effects from interfaces and lattice distortion, the above results were qualitatively discussed.
部门归属liu, xd (reprint author), acad sinica,inst met res,state key lab rapidly solidified nonequilibrium alloys,shenyang 110015,peoples r china
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/38872
专题中国科学院金属研究所
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GB/T 7714
X. D. Liu,K. Lu,B. Z. Ding,et al. ELECTRICAL-RESISTIVITY OF NANOCRYSTALLINE FE-CU-SI-B ALLOYS[J]. Acta Physica Sinica-Overseas Edition,1994,3(6):426-430.
APA X. D. Liu,K. Lu,B. Z. Ding,Z. Q. Hu,&Y. Z. Wang.(1994).ELECTRICAL-RESISTIVITY OF NANOCRYSTALLINE FE-CU-SI-B ALLOYS.Acta Physica Sinica-Overseas Edition,3(6),426-430.
MLA X. D. Liu,et al."ELECTRICAL-RESISTIVITY OF NANOCRYSTALLINE FE-CU-SI-B ALLOYS".Acta Physica Sinica-Overseas Edition 3.6(1994):426-430.
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