EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION

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	EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION
	M. H. Yuan; Y. Q. Jia; G. G. Qin
	1994
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	76 期号:9 页码:5592-5594
摘要	The Au/n-Si Schottky barrier (SB) which contains hydrogen has a 0.10 eV lower SB height (SBH) than that without hydrogen. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. In addition, ZBA and RBA cycling experiments have been made which reveal a reversible change of the SBH within at least four cycles. The annealing temperature of ZBA and especially of RBA influences the SBH. We interpret the above effect in terms of an interaction between hydrogen and metal-semiconductor interface states.
部门归属	china ctr adv sci & technol,world lab,beijing 100080,peoples r china. acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;yuan, mh (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词	N-type Gaas Crystalline Semiconductors Ti/n-gaas States Diodes
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38962
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	M. H. Yuan,Y. Q. Jia,G. G. Qin. EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION[J]. Journal of Applied Physics,1994,76(9):5592-5594.
APA	M. H. Yuan,Y. Q. Jia,&G. G. Qin.(1994).EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION.Journal of Applied Physics,76(9),5592-5594.
MLA	M. H. Yuan,et al."EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION".Journal of Applied Physics 76.9(1994):5592-5594.