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EVOLUTION OF PHOTOLUMINESCENCE IN LASER ILLUMINATING POROUS SILICON
L. Z. Zhang; H. Z. Song; B. R. Zhang; Z. H. Xu; G. G. Qin
1994
发表期刊Materials Research Bulletin
ISSN0025-5408
卷号29期号:6页码:603-609
摘要Exposed to strong laser in air, the photoluminescence (PL) peak position of porous silicon (PS) shifts first to blue side followed by a pinning at a constant wave-length, while PL intensity degrades rapidly first, then increases slowly. Fourier transform infrared absorption spectra show a continuous enhancement of vibrations related to oxygen and a continuous attenuation of vibrations related to hydrogen with exposure time. A new physical model on light emission of PS, which says that incident light excites electron-hole pairs in nanoscale silicon units (NSUs) and the electron-hole pairs diffuse outwards and recombine through the luminescence centers (LCs) outside NSUs, can explain the experimental results successfully. We think the main LCs are hydrides, such as polysilanes or Si-H bonds, in as-prepared PS samples but transfer tinder laser illumination to be point defects or impurities in SiO2 layers which cover the NSUs.
部门归属beijing univ,dept chem,beijing 100871,peoples r china. acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;zhang, lz (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词Porous Silicon Luminescent Materials Si Photoluminescence Visible Luminescence Mechanism
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/38968
专题中国科学院金属研究所
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L. Z. Zhang,H. Z. Song,B. R. Zhang,et al. EVOLUTION OF PHOTOLUMINESCENCE IN LASER ILLUMINATING POROUS SILICON[J]. Materials Research Bulletin,1994,29(6):603-609.
APA L. Z. Zhang,H. Z. Song,B. R. Zhang,Z. H. Xu,&G. G. Qin.(1994).EVOLUTION OF PHOTOLUMINESCENCE IN LASER ILLUMINATING POROUS SILICON.Materials Research Bulletin,29(6),603-609.
MLA L. Z. Zhang,et al."EVOLUTION OF PHOTOLUMINESCENCE IN LASER ILLUMINATING POROUS SILICON".Materials Research Bulletin 29.6(1994):603-609.
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