We calculate the shallow donor impurity binding energies including image potential quasi-one-dimensional GaAs/AlAs quantum well wires with rectangular cross section using the variational approach. The results we have obtained show that when impurity ion image potential is considered the variations of binding energy ale remarkable, and when the image potentials of impurity ion and electron are considered simultaneously the corresponding variations of binding energy ale small. The results also show that the image potential is important, especially when the cross section dimensions of quantum wires become small.
部门归属
shanghai jiao tong univ,inst condensed matter phys,shanghai 200030,peoples r china. acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;deng, zy (reprint author), shanghai jiao tong univ,dept appl phys,shanghai 200030,peoples r china
Z. Y. Deng,S. W. Gu. SHALLOW DONOR IMPURITIES IN QUANTUM-WELL WIRES EFFECTS OF IMAGE POTENTIAL[J]. Communications in Theoretical Physics,1993,20(4):401-407.
APA
Z. Y. Deng,&S. W. Gu.(1993).SHALLOW DONOR IMPURITIES IN QUANTUM-WELL WIRES EFFECTS OF IMAGE POTENTIAL.Communications in Theoretical Physics,20(4),401-407.
MLA
Z. Y. Deng,et al."SHALLOW DONOR IMPURITIES IN QUANTUM-WELL WIRES EFFECTS OF IMAGE POTENTIAL".Communications in Theoretical Physics 20.4(1993):401-407.
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