EFFECT OF CHEMICAL ETCHING COMBINED WITH LASER ILLUMINATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON

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	EFFECT OF CHEMICAL ETCHING COMBINED WITH LASER ILLUMINATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON
	J. Q. Duan; B. R. Zhang; L. Z. Zhang; J. C. Mao; G. G. Qin
	1993
发表期刊	Superlattices and Microstructures
ISSN	0749-6036
卷号	13 期号:2 页码:193-197
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;duan, jq (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词	Formation Mechanism Si
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39007
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Q. Duan,B. R. Zhang,L. Z. Zhang,et al. EFFECT OF CHEMICAL ETCHING COMBINED WITH LASER ILLUMINATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON[J]. Superlattices and Microstructures,1993,13(2):193-197.
APA	J. Q. Duan,B. R. Zhang,L. Z. Zhang,J. C. Mao,&G. G. Qin.(1993).EFFECT OF CHEMICAL ETCHING COMBINED WITH LASER ILLUMINATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON.Superlattices and Microstructures,13(2),193-197.
MLA	J. Q. Duan,et al."EFFECT OF CHEMICAL ETCHING COMBINED WITH LASER ILLUMINATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON".Superlattices and Microstructures 13.2(1993):193-197.