CHARACTERIZATION OF STAIN ETCHED POROUS SI WITH PHOTOLUMINESCENCE, ELECTRON-PARAMAGNETIC-RESONANCE, AND INFRARED-ABSORPTION SPECTROSCOPY

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	CHARACTERIZATION OF STAIN ETCHED POROUS SI WITH PHOTOLUMINESCENCE, ELECTRON-PARAMAGNETIC-RESONANCE, AND INFRARED-ABSORPTION SPECTROSCOPY
	Y. Q. Jia; L. Z. Zhang; J. S. Fu; B. R. Zhang; J. C. Mao; G. G. Qin
	1993
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	74 期号:12 页码:7615-7617
摘要	Porous Si (PS) layers are prepared by stain etching in a HF/NaNO2 solution on both p- and n-type crystal Si substrates, and are characterized by photoluminescence (PL), electron paramagnetic resonance (EPR), and infrared absorption (IR) spectroscopy. The PL spectra under 488 nm laser excitation exhibit a strong peak at 680-720 nm for various samples of different substrate parameters and remain stable upon aging in air or gamma irradiation; as-etched (approximately 20 min in air before measurement) and aged (for up to six months) samples show no detectable EPR signal but the gamma-irradiated samples show an isotropic g = 2.006 signal of peak-to-peak linewidth of 1.1 mT supporting an amorphous Si structure; the IR spectra show both hydrogen and oxygen related IR modes in the as-etched samples and the former decreases with aging time in air while the latter increases. Comparing our results with those of anodically etched PS samples we conclude that: (1) the PL peak position of the stain PS seems to be unique and stable as compared with that of the anodic PS varying in 620-830 nm; (2) the isotropic EPR signal of the stain PS reflects no crystallinity, in contrast with the anisotropic signal of the anodic PS; and (3) obvious oxidation in the as-etched stain PS is also in contrast with the nonobservation of oxygen-related IR modes in the as-etched anodic PS. We discuss the results in terms of structural properties and PL mechanism of PS.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;jia, yq (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词	Silicon Surfaces Luminescence Wafers
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39033
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Q. Jia,L. Z. Zhang,J. S. Fu,et al. CHARACTERIZATION OF STAIN ETCHED POROUS SI WITH PHOTOLUMINESCENCE, ELECTRON-PARAMAGNETIC-RESONANCE, AND INFRARED-ABSORPTION SPECTROSCOPY[J]. Journal of Applied Physics,1993,74(12):7615-7617.
APA	Y. Q. Jia,L. Z. Zhang,J. S. Fu,B. R. Zhang,J. C. Mao,&G. G. Qin.(1993).CHARACTERIZATION OF STAIN ETCHED POROUS SI WITH PHOTOLUMINESCENCE, ELECTRON-PARAMAGNETIC-RESONANCE, AND INFRARED-ABSORPTION SPECTROSCOPY.Journal of Applied Physics,74(12),7615-7617.
MLA	Y. Q. Jia,et al."CHARACTERIZATION OF STAIN ETCHED POROUS SI WITH PHOTOLUMINESCENCE, ELECTRON-PARAMAGNETIC-RESONANCE, AND INFRARED-ABSORPTION SPECTROSCOPY".Journal of Applied Physics 74.12(1993):7615-7617.