| FORMATION OF AMORPHOUS GE-S SEMICONDUCTOR ALLOYS BY MECHANICAL ALLOYING | |
| T. D. Shen; K. Y. Wang; M. X. Quan; Z. Q. Hu | |
| 1993 | |
| Source Publication | Applied Physics Letters
 |
| ISSN | 0003-6951 |
| Volume | 63Issue:12Pages:1637-1639 |
| Abstract | Amorphous Ge1-xSx(x=0.61, 0.67, and 0.72) semiconductor alloys have been found formed by ball milling of powder mixtures of elemental Ge and S. The amorphization process and the ball-milled products have been investigated by x-ray diffraction, transmission electron microscopy, and Raman scattering. The results show that amorphous Ge-S alloys may form in a self-heating reaction, driven by the large heat of formation of amorphous and/or liquid Ge-S alloys. The structure of mechanically alloyed amorphous Ge-S alloys is similar to but not exactly identical with that of rapidly cooled amorphous Ge-S alloys. The amorphization transition mechanism reported is believed to be suitable for preparing other amorphous semiconductor alloys with similar thermodynamic conditions. |
| description.department | acad sinica,inst met res,state key lab rsa,shenyang 110015,peoples r china. |
| Keyword | Magnetic-properties Ni-zr Amorphization Powders Transition Interdiffusion Germanium Systems Glasses Metals |
| URL | 查看原文 |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/39115 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | T. D. Shen,K. Y. Wang,M. X. Quan,et al. FORMATION OF AMORPHOUS GE-S SEMICONDUCTOR ALLOYS BY MECHANICAL ALLOYING[J]. Applied Physics Letters,1993,63(12):1637-1639. |
| APA | T. D. Shen,K. Y. Wang,M. X. Quan,&Z. Q. Hu.(1993).FORMATION OF AMORPHOUS GE-S SEMICONDUCTOR ALLOYS BY MECHANICAL ALLOYING.Applied Physics Letters,63(12),1637-1639. |
| MLA | T. D. Shen,et al."FORMATION OF AMORPHOUS GE-S SEMICONDUCTOR ALLOYS BY MECHANICAL ALLOYING".Applied Physics Letters 63.12(1993):1637-1639. |
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