INTERDIFFUSION STUDY OF AMORPHOUS NI-SI MULTILAYER AT LOW-TEMPERATURE

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	INTERDIFFUSION STUDY OF AMORPHOUS NI-SI MULTILAYER AT LOW-TEMPERATURE
	W. H. Wang; H. Y. Bai; W. K. Wang
	1993
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	74 期号:4 页码:2471-2474
摘要	Little is known about the interdiffusion in the amorphous Ni-Si multilayer due to the lack of suitable experimental method. In this paper, the interdiffusion phenomena in the amorphous Ni-Si multilayer are investigated by an in situ x-ray diffraction technique. The temperature-dependent interdiffusivity obtained by monitoring the decay of the first-order modulation peak as a function of annealing time can be described in terms of the Arrhenius relation. The effective interdiffusivities can be expressed as D(e)(T) = 2.13 X 10(-17) exp[-(0.61+/-0.02)/k(B)T] m2/s (423-613 K). A retarded interstitial diffusion mechanism is suggested to explain the diffusion process in the amorphous multilayer films.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;wang, wh (reprint author), acad sinica,inst phys,beijing 100080,peoples r china
关键词	Modulation Wavelength Silicon Diffusion Films Metals
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39138
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. H. Wang,H. Y. Bai,W. K. Wang. INTERDIFFUSION STUDY OF AMORPHOUS NI-SI MULTILAYER AT LOW-TEMPERATURE[J]. Journal of Applied Physics,1993,74(4):2471-2474.
APA	W. H. Wang,H. Y. Bai,&W. K. Wang.(1993).INTERDIFFUSION STUDY OF AMORPHOUS NI-SI MULTILAYER AT LOW-TEMPERATURE.Journal of Applied Physics,74(4),2471-2474.
MLA	W. H. Wang,et al."INTERDIFFUSION STUDY OF AMORPHOUS NI-SI MULTILAYER AT LOW-TEMPERATURE".Journal of Applied Physics 74.4(1993):2471-2474.