EFFECTS OF HYDROGEN ON THE SCHOTTKY-BARRIER OF TI/N-GAAS DIODES

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	EFFECTS OF HYDROGEN ON THE SCHOTTKY-BARRIER OF TI/N-GAAS DIODES
	S. X. Jin; L. P. Wang; M. H. Yuan; J. J. Chen; Y. Q. Jia; G. G. Qin
	1992
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	71 期号:1 页码:536-538
摘要	Having been exposed to hydrogen plasma, Te-doped GaAs wafers were deposited with metal Ti, to form Ti/n-GaAs Schottky barrier diodes (SBD). It was found that due to hydrogenation the Schottky barrier height (SBH) of the SBD decreases from 0.76 to 0.58 eV and the effective Richardson constant A** decreases from 11 to 0.03 A/cm2/K2. Annealing the hydrogenated SBD at different reverse biases at 100-degrees-C produces SBHs that have a one-to-one correlation with the biases of reverse-bias annealing (RBA), i.e., the SBH can be controlled, within the range 0.58-0.74 eV, by the bias of RBA. When the reverse bias is equal to or larger than 3 V, the SBH and the effective Richardson constant of the hydrogenated SBDs after RBA are very near to those of SBDs without hydrogenation. This means that a RBA with a bias higher than a critical value, 3 V in our case, can remove the effects of hydrogenation, but if the SBD is annealed again without a bias at 100-degrees-C for 1 h or more, its SBH and effective Richardson constant recover their hydrogenated values. The main experimental facts can be explained qualitatively by a simple theoretical model.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;jin, sx (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词	Crystalline Semiconductors Si
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39238
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. X. Jin,L. P. Wang,M. H. Yuan,et al. EFFECTS OF HYDROGEN ON THE SCHOTTKY-BARRIER OF TI/N-GAAS DIODES[J]. Journal of Applied Physics,1992,71(1):536-538.
APA	S. X. Jin,L. P. Wang,M. H. Yuan,J. J. Chen,Y. Q. Jia,&G. G. Qin.(1992).EFFECTS OF HYDROGEN ON THE SCHOTTKY-BARRIER OF TI/N-GAAS DIODES.Journal of Applied Physics,71(1),536-538.
MLA	S. X. Jin,et al."EFFECTS OF HYDROGEN ON THE SCHOTTKY-BARRIER OF TI/N-GAAS DIODES".Journal of Applied Physics 71.1(1992):536-538.