DONOR IMPURITY STATES ON ROUGH SEMICONDUCTOR INTERFACES

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	DONOR IMPURITY STATES ON ROUGH SEMICONDUCTOR INTERFACES
	H. Sun; S. W. Gu
	1992
发表期刊	Communications in Theoretical Physics
ISSN	0253-6102
卷号	17 期号:2 页码:229-234
摘要	Ground state energies of shallow states of donor impurities on cosine-shaped, periodically rough interfaces formed by two isotropic semiconductors, such as GaAs/Ga1-xAlxAs or GaAs/vacuum, are calculated variationally with the approximation that the interfaces represent infinitely high potential barriers. The results show that changes in the ground state energies of interfaces impurity states caused by rough interface are not negligible especially for GaAs/Ga1-xAlxAs interfaces with sharp or dense interface defects.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china. shanghai jiao tong univ,dept phys,shanghai 200030,peoples r china. shanghai jiao tong univ,inst condensed matter phys,shanghai 200030,peoples r china.;sun, h (reprint author), chinese ctr adv sci & technol,world lab,beijing 100080,peoples r china
关键词	Shallow-donor Quantum Wells Spectra Energy
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39291
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. Sun,S. W. Gu. DONOR IMPURITY STATES ON ROUGH SEMICONDUCTOR INTERFACES[J]. Communications in Theoretical Physics,1992,17(2):229-234.
APA	H. Sun,&S. W. Gu.(1992).DONOR IMPURITY STATES ON ROUGH SEMICONDUCTOR INTERFACES.Communications in Theoretical Physics,17(2),229-234.
MLA	H. Sun,et al."DONOR IMPURITY STATES ON ROUGH SEMICONDUCTOR INTERFACES".Communications in Theoretical Physics 17.2(1992):229-234.