ELECTRONIC-STRUCTURE AND MAGNETISM OF FE-GE INTERFACES

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	ELECTRONIC-STRUCTURE AND MAGNETISM OF FE-GE INTERFACES
	D. C. Tian; Q. Jiang
	1992
发表期刊	Journal of Physics-Condensed Matter
ISSN	0953-8984
卷号	4 期号:3 页码:799-808
摘要	The local electronic density of states (LDOS) has been calculated for Fe-Ge(110), Fe-Ge(111) and Fe-Ge(100) interfaces and neighbouring atomic planes using the recursion method. Interface states are found to exist within the mutual gaps of the constituent atoms and strongly depending on the local atomic environments. The most excess LDOSS are found for Fe-Ge(111) interface and the least for Fe-Ge(110). The magnetic moments for Fe atoms are found to decrease when the Fe layer approaches the interface boundary, which is in accord with the experiments. The electron spin polarization parameters evaluated from the LDOS are qualitatively consistent with experimental measurements.
部门归属	acad sinica,int ctr mat phys,shenyang,peoples r china.;tian, dc (reprint author), wuhan univ,dept phys,wuhan,peoples r china
关键词	Spin Polarization Surface Magnetization Recursion Method States Iron Films Ni
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39295
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	D. C. Tian,Q. Jiang. ELECTRONIC-STRUCTURE AND MAGNETISM OF FE-GE INTERFACES[J]. Journal of Physics-Condensed Matter,1992,4(3):799-808.
APA	D. C. Tian,&Q. Jiang.(1992).ELECTRONIC-STRUCTURE AND MAGNETISM OF FE-GE INTERFACES.Journal of Physics-Condensed Matter,4(3),799-808.
MLA	D. C. Tian,et al."ELECTRONIC-STRUCTURE AND MAGNETISM OF FE-GE INTERFACES".Journal of Physics-Condensed Matter 4.3(1992):799-808.