| AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON |
| E. Wu; X. C. Xi; X. T. Lu; D. Y. Shen; X. M. Wang; G. G. Qin
|
| 1992
|
| 发表期刊 | Science in China Series a-Mathematics Physics Astronomy
 |
| ISSN | 1001-6511
|
| 卷号 | 35期号:4页码:437-442 |
| 摘要 | A new EPR defect (labeled Si-PK5) and two previously known defects (Si-S1 and Si-S2) are observed in proton-implanted N-type FZ-lilicon. Our results indicate that Si-PK5 has trigonal symmetry with the <111> direction as its symmetry axis. Its paramagnetic parameters are S = 1/2, g(parallel-to) = 2.0078 and g(perpendicular-to) = 2.0174. According to the empirical methods of classifying defects given by Lee and Corbett and by Sieverts. Si-Pk5 presumably has the structure of bond-centered interstitial. As for Si-S2, the hyperfine splitting of one equivalent Si-29 has been observed for the first time. |
| 部门归属 | beijing univ,dept technol phys,beijing 100871,peoples r china. int ctr mat phys,shenyang,peoples r china.;wu, e (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
|
| 关键词 | Defects
Epr
Ir Absorption Peak
Hyperfine Splitting
Proton-implantation
Neutron-irradiated Silicon
Charge State
Hydrogen
|
| URL | 查看原文
|
| WOS记录号 | WOS:A1992HV40800005
|
| 引用统计 |
|
| 文献类型 | 期刊论文
|
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/39326
|
| 专题 | 中国科学院金属研究所
|
推荐引用方式
GB/T 7714 |
E. Wu,X. C. Xi,X. T. Lu,et al. AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON[J]. Science in China Series a-Mathematics Physics Astronomy,1992,35(4):437-442.
|
| APA |
E. Wu,X. C. Xi,X. T. Lu,D. Y. Shen,X. M. Wang,&G. G. Qin.(1992).AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON.Science in China Series a-Mathematics Physics Astronomy,35(4),437-442.
|
| MLA |
E. Wu,et al."AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON".Science in China Series a-Mathematics Physics Astronomy 35.4(1992):437-442.
|
修改评论