| DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON | |
| M. H. Yuan; D. C. Peng; Q. Z. Peng; Y. H. Zhang; J. Q. Li; G. G. Qin | |
| 1992 | |
| Source Publication | Journal of Applied Physics
 |
| ISSN | 0021-8979 |
| Volume | 71Issue:3Pages:1182-1188 |
| Abstract | The generation rates and annealing behavior of the irradiation defects in n- and p-type hydrogen-grown float-zoned silicon (irradiated with gamma-rays from Co-60) have been studied by the deep-level transient spectroscopy technique and compared with those of irradiated argon-grown float-zoned silicon. Assuming the generation rate of the irradiation defects created by gamma-rays in argon-grown float-zoned silicon is 1, then the generation rates of the A center, divacancy, and phosphorus vacancy in n-type hydrogen-grown float-zoned silicon are 0.23, 0.78, and 0.19, respectively, while the generation rates of the divacancy and H(0.37 eV) in p-type hydrogen-grown silicon are 0.79 and 0.10, respectively. Due to the existence of hydrogen, the generation rate reduction of the major irradiation defects in gamma-ray irradiated silicon is more pronounced than that in 1-MeV electron irradiated silicon. Three hydrogen-related defects, H(0.10 eV), H(0.29 eV), and H(0.56 eV), were seen in gamma-ray irradiated hydrogen-grown float-zoned silicon, among which H(0.10 eV) and H(0.56 eV) were reported by us to exist in electron irradiated hydrogen-grown float-zoned silicon, while H(0.29 eV) is reported for the first time. The convergence effect of annealing temperatures for the irradiation defects was observed. That is, the annealing temperatures at which the irradiation defects diminish are almost the same for most irradiation defects, similar to that in the case of electron irradiation, was observed, showing that this effect is characteristic of the hydrogen behavior in silicon, and irrelevant to the type of irradiation. |
| description.department | beijing univ,dept technol phys,beijing 100871,peoples r china. acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;yuan, mh (reprint author), beijing univ,dept phys,beijing 100871,peoples r china |
| Keyword | Crystalline Semiconductors Defects |
| URL | 查看原文 |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/39342 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | M. H. Yuan,D. C. Peng,Q. Z. Peng,et al. DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON[J]. Journal of Applied Physics,1992,71(3):1182-1188. |
| APA | M. H. Yuan,D. C. Peng,Q. Z. Peng,Y. H. Zhang,J. Q. Li,&G. G. Qin.(1992).DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON.Journal of Applied Physics,71(3),1182-1188. |
| MLA | M. H. Yuan,et al."DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON".Journal of Applied Physics 71.3(1992):1182-1188. |
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