ELECTRONIC STATES IN QUANTUM-WELLS WITH INTERFACE DEFECTS

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	ELECTRONIC STATES IN QUANTUM-WELLS WITH INTERFACE DEFECTS
	H. Sun; X. Zhang; S. W. Gu
	1991
发表期刊	Communications in Theoretical Physics
ISSN	0253-6102
卷号	16 期号:3 页码:281-288
摘要	Effects of interface defects on electronic states in quantum wells (QWs) are investigated theoretically by introducing a coordinate transformation that transforms QWs with defective interfaces to those with planar interfaces plus an effective potential associated with interface defects. The interface defects are idealized as a cylindrical hollow protruding into the barrier materials on one of the interfaces. Electronic ground state energies are calculated variationally as functions of the defect lateral sizes. For GaAs-Ga1-xAlxAs QWs with the well width d less than 150 angstrom, the changes in electronic energies due to interface defects will produce sizable effects on optical experiments, such as broadenings of excitation spectra of QWs. But our calculation predicts smaller spectrum broadenings than those predicated by the previous theory for the same interface disorder.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china. jiao tong univ,dept phys,shanghai 200030,peoples r china. jiao tong univ,inst condensed matter phys,shanghai 200030,peoples r china.;sun, h (reprint author), chinese ctr adv sci & technol,world lab,beijing 100080,peoples r china
关键词	Optical Characterization Roughness Disorder Growth
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39447
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. Sun,X. Zhang,S. W. Gu. ELECTRONIC STATES IN QUANTUM-WELLS WITH INTERFACE DEFECTS[J]. Communications in Theoretical Physics,1991,16(3):281-288.
APA	H. Sun,X. Zhang,&S. W. Gu.(1991).ELECTRONIC STATES IN QUANTUM-WELLS WITH INTERFACE DEFECTS.Communications in Theoretical Physics,16(3),281-288.
MLA	H. Sun,et al."ELECTRONIC STATES IN QUANTUM-WELLS WITH INTERFACE DEFECTS".Communications in Theoretical Physics 16.3(1991):281-288.