LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES

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	LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES
	E. G. Wang; D. S. Wang
	1991
发表期刊	Physica Status Solidi B-Basic Research
ISSN	0370-1972
卷号	167 期号:1 页码:189-196
摘要	By the recursion method a theoretical study is made of the electronic structure of a (001)-oriented (GaP)1/(InP)1 strained layer superlattice with interstitial defects. A Keating model is used to determine the structural parameters. The density of states of all possible interstitials and their neighbors in the stable monolayer superlattice are calculated. Some new self and impurity diffusion mechanisms, which are not found in a GaAs/AlAs matched superlattice, are proposed for the first time.
部门归属	acad sinica,inst phys,surface phys lab,beijing 100080,peoples r china.;wang, eg (reprint author), acad sinica shenyang,int ctr mat phys,shenyang,peoples r china
关键词	Alas/gaas Superlattices Electronic-structure Optical-properties Native Defects Semiconductors Stability
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39456
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	E. G. Wang,D. S. Wang. LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES[J]. Physica Status Solidi B-Basic Research,1991,167(1):189-196.
APA	E. G. Wang,&D. S. Wang.(1991).LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES.Physica Status Solidi B-Basic Research,167(1),189-196.
MLA	E. G. Wang,et al."LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES".Physica Status Solidi B-Basic Research 167.1(1991):189-196.