STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES

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	STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES
	E. G. Wang; J. Zi; D. S. Wang
	1991
发表期刊	Journal of Physics-Condensed Matter
ISSN	0953-8984
卷号	3 期号:36 页码:6977-6987
摘要	The stability of (001)- and (111)-oriented (GaP)1/(InP)1 strained-layer superlattices (SLSS) is studied by the Keating model. The obtained deviations of the In-P and Ga-P bond lengths of the (001) stable superlattice structure from the constituent bulk lengths are -1.0% and 0.8%, respectively. A recursion method is used to calculate the bulk and surface electronic structures for both (001) and (111) (GaP)1/(InP)1 SLSS. It is found that the band gaps of the (001) and (111) structures, respectively, are smaller by 0.28 eV and 0.31 eV than the average of those of bulk InP and GaP. From the total-structural-energy and Fermi level calculation, we conclude that the strained-monolayer superlattice growth along the (001) direction is more stable than that along the (111) direction. A qualitative trend is proposed to elucidate the influence of strain on the electronic occupation in a strained-layer superlattice fabricated from III-V semiconductors, with the aid of two auxiliary systems. The localized states of a Si impurity in these systems are calculated.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china. fudan univ,dept phys,shanghai,peoples r china. china ctr adv sci & technol,ctr theoret phys,world lab,beijing,peoples r china.;wang, eg (reprint author), acad sinica,inst phys,surface phys lab,pob 60391,beijing 100080,peoples r china
关键词	Hydrogenic Impurity States Quantum-well Structures Alas/gaas Superlattices Semiconductors Transitions Defects Order
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39457
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	E. G. Wang,J. Zi,D. S. Wang. STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES[J]. Journal of Physics-Condensed Matter,1991,3(36):6977-6987.
APA	E. G. Wang,J. Zi,&D. S. Wang.(1991).STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES.Journal of Physics-Condensed Matter,3(36),6977-6987.
MLA	E. G. Wang,et al."STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES".Journal of Physics-Condensed Matter 3.36(1991):6977-6987.