NEGATIVE CHARGE STATE OF HYDROGEN SPECIES IN N-TYPE GAAS

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	NEGATIVE CHARGE STATE OF HYDROGEN SPECIES IN N-TYPE GAAS
	M. H. Yuan; L. P. Wang; S. X. Jin; J. J. Chen; G. G. Qin
	1991
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	58 期号:9 页码:925-927
摘要	Having been exposed to hydrogen plasma, the Te-doped GaAs wafers were deposited with metal Ti, to form the Ti/n-GaAs Schottky barrier diodes (SBDs). The profiles of donor concentration after successive annealing of the hydrogenated SBD at several reverse biases at 100-degrees-C, indicated that the donor concentration in the strong electrical field region of the depletion layer increase monotonically and the donor concentration in the weak electrical field region of the depletion layer decrease monotonically with time. It is confirmed that hydrogen can be present as a negatively charged species in n-type GaAs and thus one can conclude that besides the deep donor level determined previously, hydrogen in GaAs has an acceptor level in the lower half of the energy gap or near the mid gap. There is evidence that the stronger the electrical field in strong field region of depletion layer, the faster the TeH complexes decompose in that region during a reverse bias annealing.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;yuan, mh (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词	Crystalline Semiconductors Silicon Diodes
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39498
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	M. H. Yuan,L. P. Wang,S. X. Jin,et al. NEGATIVE CHARGE STATE OF HYDROGEN SPECIES IN N-TYPE GAAS[J]. Applied Physics Letters,1991,58(9):925-927.
APA	M. H. Yuan,L. P. Wang,S. X. Jin,J. J. Chen,&G. G. Qin.(1991).NEGATIVE CHARGE STATE OF HYDROGEN SPECIES IN N-TYPE GAAS.Applied Physics Letters,58(9),925-927.
MLA	M. H. Yuan,et al."NEGATIVE CHARGE STATE OF HYDROGEN SPECIES IN N-TYPE GAAS".Applied Physics Letters 58.9(1991):925-927.