MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING

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	MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING
	Y. C. Zhou; X. Chang; J. Zhou; F. Xia; C. H. Shih
	1991
发表期刊	Philosophical Magazine Letters
ISSN	0950-0839
卷号	63 期号:1 页码:19-22
摘要	The microstructure of as-received and post-annealed SiC whiskers were investigated by transmission electron microscopy. In the as-received SiC whiskers, the thinner beta-SiC parts were jointed with the one-dimensional disordered parts by {111}, twin boundaries. After annealing, beta-SiC parts became coarser than the one-dimensional disordered parts at 1900-degrees-C and then disappeared at 2000-degrees-C.
部门归属	zhou, yc (reprint author), acad sinica,inst met res,shenyang 110015,peoples r china
关键词	Matrix Composites
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39540
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. C. Zhou,X. Chang,J. Zhou,et al. MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING[J]. Philosophical Magazine Letters,1991,63(1):19-22.
APA	Y. C. Zhou,X. Chang,J. Zhou,F. Xia,&C. H. Shih.(1991).MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING.Philosophical Magazine Letters,63(1),19-22.
MLA	Y. C. Zhou,et al."MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING".Philosophical Magazine Letters 63.1(1991):19-22.