| EXPERIMENTAL-DETERMINATION OF THE INTRINSIC STACKING-FAULT ENERGY OF SIC CRYSTALS | |
| X. G. Ning; H. Q. Ye | |
| 1990 | |
| Source Publication | Journal of Physics-Condensed Matter
 |
| ISSN | 0953-8984 |
| Volume | 2Issue:50Pages:10223-10225 |
| Abstract | The intrinsic stacking fault in the (111) plane of SiC, which is closed by two Shockley partial dislocations, has been observed by high-resolution electron microscopy. The energy of the intrinsic stacking-fault of SiC is experimentally determined and compared with the theoretical value calculated by Denteneer et al. |
| description.department | ning, xg (reprint author), acad sinica,inst met res,atom imaging solids lab,shenyang 110015,peoples r china |
| Keyword | Silicon-carbide Growth |
| URL | 查看原文 |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/39590 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | X. G. Ning,H. Q. Ye. EXPERIMENTAL-DETERMINATION OF THE INTRINSIC STACKING-FAULT ENERGY OF SIC CRYSTALS[J]. Journal of Physics-Condensed Matter,1990,2(50):10223-10225. |
| APA | X. G. Ning,&H. Q. Ye.(1990).EXPERIMENTAL-DETERMINATION OF THE INTRINSIC STACKING-FAULT ENERGY OF SIC CRYSTALS.Journal of Physics-Condensed Matter,2(50),10223-10225. |
| MLA | X. G. Ning,et al."EXPERIMENTAL-DETERMINATION OF THE INTRINSIC STACKING-FAULT ENERGY OF SIC CRYSTALS".Journal of Physics-Condensed Matter 2.50(1990):10223-10225. |
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