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Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method
Z. L. Liu; Q. Liu; H. R. Liu; K. L. Yao
2005
Source PublicationPhysica Status Solidi a-Applications and Materials Science
ISSN0031-8965
Volume202Issue:9Pages:1834-1841
AbstractPb(Zr0.5Ti0.5)O-3 (PZT) and Co-doped Pb(Zr0.5Ti0.5)O-3 (PCZT) thin films have been fabricated on ITO/glass substrates by a sol-gel method combined with a rapid thermal annealing process. The films were poly-crystalline with (101)-preferred orientation. The experiments found that the addition of cobalt in PZT films greatly improved the ferroelectric properties of PZT thin films. Large remanent polarization and small coercive field were confirmed by P-E hysteresis loop measurements. The values for PZT films and PCZT films with 10 mol% Co-doped annealed at 600 degrees C were 36.5 mu C/cm(2) and 45.2 kV/cm, 58.6 mu C/cm(2) and 67.3 kV/cm, respectively. Also, dielectric properties and I-V properties of PCZT films were revealed to be sensitive to the content of cobalt. The loss factor was higher for PCZT than for PZT films. The same behavior was obtained for the leakage current density.
description.departmenthuazhong univ sci & technol, dept phys, wuhan 430074, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110010, peoples r china.;liu, q (reprint author), huazhong univ sci & technol, dept phys, wuhan 430074, peoples r china;liuqing_hust@yahoo.com
KeywordTitanate Thin-films Ferroelectric Properties Dielectric-properties Bi4ti3o12 Ceramics Microstructures
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/40018
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Z. L. Liu,Q. Liu,H. R. Liu,et al. Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method[J]. Physica Status Solidi a-Applications and Materials Science,2005,202(9):1834-1841.
APA Z. L. Liu,Q. Liu,H. R. Liu,&K. L. Yao.(2005).Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method.Physica Status Solidi a-Applications and Materials Science,202(9),1834-1841.
MLA Z. L. Liu,et al."Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method".Physica Status Solidi a-Applications and Materials Science 202.9(2005):1834-1841.
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