IMR OpenIR
Improving charge-injection balance and cathode transmittance of top-emitting organic light-emitting device with p-type silicon anode
G. L. Ma; G. Z. Ran; A. G. Xu; Y. H. Xu; Y. P. Qiao; W. X. Chen; L. Dai; G. G. Qin
2005
发表期刊Applied Physics Letters
ISSN0003-6951
卷号87期号:8
摘要Both charge-injection balance and high transmittance for the cathode are important to achieve high electroluminescence (EL) efficiency for a top-emitting organic light-emitting device (TEOLED) fabricated on silicon substrate. In this letter, by optimizing the electrical resistivity of the p-type silicon chip used as the anode and applying a Yb/Au double layer cathode with high electron-injection property and high transmittance, the TEOLED with a configuration of p-type silicon/thermal grown SiO2/NPB/Alq(3)/Yb/Au exhibits a higher EL efficiency than those of the TEOLEDs each with a Si chip as the anode reported previously. Its current efficiency is almost equal to that of a TEOLED with the same configuration except for an indium tin oxide anode. (c) 2005 American Institute of Physics.
部门归属peking univ, sch phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, sch phys, beijing 100871, peoples r china;qingg@pku.edu.cn
关键词Electroluminescence Diodes Gan
URL查看原文
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/40035
专题中国科学院金属研究所
推荐引用方式
GB/T 7714
G. L. Ma,G. Z. Ran,A. G. Xu,et al. Improving charge-injection balance and cathode transmittance of top-emitting organic light-emitting device with p-type silicon anode[J]. Applied Physics Letters,2005,87(8).
APA G. L. Ma.,G. Z. Ran.,A. G. Xu.,Y. H. Xu.,Y. P. Qiao.,...&G. G. Qin.(2005).Improving charge-injection balance and cathode transmittance of top-emitting organic light-emitting device with p-type silicon anode.Applied Physics Letters,87(8).
MLA G. L. Ma,et al."Improving charge-injection balance and cathode transmittance of top-emitting organic light-emitting device with p-type silicon anode".Applied Physics Letters 87.8(2005).
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[G. L. Ma]的文章
[G. Z. Ran]的文章
[A. G. Xu]的文章
百度学术
百度学术中相似的文章
[G. L. Ma]的文章
[G. Z. Ran]的文章
[A. G. Xu]的文章
必应学术
必应学术中相似的文章
[G. L. Ma]的文章
[G. Z. Ran]的文章
[A. G. Xu]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。