| 摘要 | Ge-70 isotopic nanocrystals embedded in SiO2 films were prepared by ion-implantation and neutron irradiation. Laser Raman scattering (LRS) and photoluminescence (PL) spectra were employed to characterize the samples. After Ge-70(+) ions with the dose of 3 x 10(16) cm(-2) and the energy of 150 keV were implanted with subsequent annealing, the Raman peak of Ge-70 nanocrystals is shown at around 305 cm(-1) due to isotopic effect. It blueshifts to higher wave numbers and the FWHM becomes narrower with increasing annealed temperature. However, The PL peak at 565 nm from nanocrystals is not exhibited before neutron irradiation due to the quenching of the GeO4 tetrahedra, instead of GeO2 due to Ge insufficiency. A Raman peak position 262 cm(-1) corresponding to GeO4 tetrahedra, was formed after ion-implantation and could be annihilated by neutron irradiation and subsequent annealing, which help improve the luminescent property of Ge nanocrystals. (C) 2012 Elsevier B.V. All rights reserved. |
| 部门归属 | [fan, l.; lu, t.; chen, q.; hu, y.; dun, s.; hu, q.; you, c.] sichuan univ, dept phys, chengdu 610064, peoples r china. [fan, l.; lu, t.; chen, q.; hu, y.; dun, s.; hu, q.; you, c.] sichuan univ, key lab radiat phys & technol, minist educ, chengdu 610064, peoples r china. [lu, t.] chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. [zhang, s.; tang, b.; dai, j.] china acad engn phys, inst nucl phys & chem, mianyang 621900, sichuan, peoples r china.;lu, t (reprint author), sichuan univ, dept phys, chengdu 610064, peoples r china.;lutiecheng@vip.sina.com
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| APA |
L. Fan.,T. Lu.,Q. Chen.,Y. Hu.,S. Dun.,...&J. Dai.(2012).Ge-70 nanocrystals in SiO2 films under neutron irradiation: A Raman and photoluminescence study.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,286,287-290.
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