Observation of infrared-active modes in Raman scattering from topological insulator nanoplates | |
R. He; Z. H. Wang; R. L. J. Qiu; C. Delaney; B. Beck; T. E. Kidd; C. C. Chancey; X. P. A. Gao | |
2012 | |
发表期刊 | Nanotechnology
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ISSN | 0957-4484 |
卷号 | 23期号:45 |
摘要 | Two infrared (IR)-active vibrational modes, observed at 93 and 113 cm(-1) in Raman scattering, are evidence of an inversion symmetry breakdown in thin (similar to 10 nm) nanoplates of topological insulator Bi2Te3 as-grown on SiO2. Both Raman and IR modes are preserved after typical device fabrication processes. In nanoplates transferred to another SiO2 substrate via contact printing, however, the IR modes are absent, and the Raman spectra are similar to those from bulk samples. The differences between as-grown and transferred nanoplates may result from nanoplate-substrate interactions. |
部门归属 | [he, rui; delaney, conor; beck, ben; kidd, t. e.; chancey, c. c.] univ no iowa, dept phys, cedar falls, ia 50614 usa. [wang, zhenhua; qiu, richard l. j.; gao, xuan p. a.] case western reserve univ, dept phys, cleveland, oh 44106 usa. [wang, zhenhua] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. [wang, zhenhua] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;he, r (reprint author), univ no iowa, dept phys, cedar falls, ia 50614 usa. |
关键词 | Single Dirac Cone Bi2te3 Surface Bi2se3 Spectroscopy Nanoribbons Sb2te3 |
URL | 查看原文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/59999 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | R. He,Z. H. Wang,R. L. J. Qiu,et al. Observation of infrared-active modes in Raman scattering from topological insulator nanoplates[J]. Nanotechnology,2012,23(45). |
APA | R. He.,Z. H. Wang.,R. L. J. Qiu.,C. Delaney.,B. Beck.,...&X. P. A. Gao.(2012).Observation of infrared-active modes in Raman scattering from topological insulator nanoplates.Nanotechnology,23(45). |
MLA | R. He,et al."Observation of infrared-active modes in Raman scattering from topological insulator nanoplates".Nanotechnology 23.45(2012). |
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