Grain refinement of Al-Cu alloy in low voltage pulsed magnetic field | |
Y. J. Li; W. Z. Tao; Y. S. Yang | |
2012 | |
发表期刊 | Journal of Materials Processing Technology
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ISSN | 0924-0136 |
卷号 | 212期号:4页码:903-909 |
摘要 | The effect of a low voltage pulsed magnetic field (LVPMF) on grain refinement of Al-Cu alloy was investigated at different solidification stages. The cooling curve was also studied to investigate the grain refinement mechanism of LVPMF. The fine grains are obtained by applying the LVPMF during the nucleation stage. The LVPMF has no obvious influence on the solidification structure when it is applied during liquid phase stage or crystal growth stage. Application of LVPMF increases the nucleation temperature of the isomorphous transformation, and also decreases the recalescence magnitude of the alloy. The refining mechanism was proposed that the LVPMF provides extra energy for nucleation, which decreases the energy barrier and the critical radius for nucleation, leading to high nucleation rate and grain refinement. (C) 2011 Elsevier B.V. All rights reserved. |
部门归属 | [li, y. j.; tao, w. z.; yang, y. s.] chinese acad sci, inst met res, shenyang 110016, peoples r china.;yang, ys (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china.;ysyang@imr.ac.cn |
关键词 | Grain Refinement Low Voltage Pulsed Magnetic Field Solidification Structure Al-cu Alloy Stainless-steel Solidification Microstructure Transformation |
URL | 查看原文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/60082 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Y. J. Li,W. Z. Tao,Y. S. Yang. Grain refinement of Al-Cu alloy in low voltage pulsed magnetic field[J]. Journal of Materials Processing Technology,2012,212(4):903-909. |
APA | Y. J. Li,W. Z. Tao,&Y. S. Yang.(2012).Grain refinement of Al-Cu alloy in low voltage pulsed magnetic field.Journal of Materials Processing Technology,212(4),903-909. |
MLA | Y. J. Li,et al."Grain refinement of Al-Cu alloy in low voltage pulsed magnetic field".Journal of Materials Processing Technology 212.4(2012):903-909. |
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