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Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis
L. P. Ma; W. C. Ren; Z. L. Dong; L. Q. Liu; H. M. Cheng
2012
发表期刊Chinese Science Bulletin
ISSN1001-6538
卷号57期号:23页码:2995-2999
摘要Recently, chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and high- quality monolayer graphene. In this paper, we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper, and then focus on the recent progress on the quality improvement, number of layers control and transfer-free growth of graphene. In the end, we attempt to analyze the possible development of CVD growth of graphene in future, including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders.
部门归属[ma laipeng; ren wencai; cheng huiming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [dong zaili; liu lianqing] chinese acad sci, shenyang inst automat, state key lab robot, shenyang 110016, peoples r china.;ma, lp (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;lpma@imr.ac.cn; wcren@imr.ac.cn
关键词Graphene Controlled Growth Chemical Vapor Deposition Copper Substrate Bilayer Graphene Layer Graphene Films Cu(111) Foils
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/60153
专题中国科学院金属研究所
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GB/T 7714
L. P. Ma,W. C. Ren,Z. L. Dong,et al. Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis[J]. Chinese Science Bulletin,2012,57(23):2995-2999.
APA L. P. Ma,W. C. Ren,Z. L. Dong,L. Q. Liu,&H. M. Cheng.(2012).Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis.Chinese Science Bulletin,57(23),2995-2999.
MLA L. P. Ma,et al."Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis".Chinese Science Bulletin 57.23(2012):2995-2999.
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