Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma

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	Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma
	Y. B. Tang; L. C. Yin; Y. Yang; X. H. Bo; Y. L. Cao; H. E. Wang; W. J. Zhang; I. Bello; S. T. Lee; H. M. Cheng; C. S. Lee
	2012
发表期刊	Acs Nano
ISSN	1936-0851
卷号	6 期号:3 页码:1970-1978
摘要	We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere of trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy and X-ray photoemission spectroscopy analyses of the graphene reacted with ion atmosphere showed that B atoms are substitutionally incorporated into graphenes without segregation of B domains. The B content was adjusted over a range of 0-13.85 atom % by controlling the ion reaction time, from which the doping effects on transport properties were quantitatively evaluated. Electrical measurements from graphene field-effect transistors show that the B-doped graphenes have a distinct p-type conductivity with a current on/off ratio higher than 10(2). Especially, the band gap of graphenes is tuned from 0 to similar to 0.54 eV with Increasing B content, leading to a series of modulated transport properties. We believe the controllable doping for graphenes with predictable transport properties may pave a way for the development of graphene-based devices.
部门归属	[tang, yong-bing; yang, yang; bo, xiang-hui; cao, yu-lin; wang, hong-en; zhang, wen-jun; bello, igor; lee, shuit-tong; lee, chun-sing] city univ hong kong, ctr super diamond & adv films cosdaf, hong kong, hong kong, peoples r china. [tang, yong-bing; yang, yang; bo, xiang-hui; cao, yu-lin; wang, hong-en; zhang, wen-jun; bello, igor; lee, shuit-tong; lee, chun-sing] city univ hong kong, dept phys & mat sci, hong kong, hong kong, peoples r china. [yin, li-chang; cheng, hui-ming] chinese acad sci, shenyang natl lab mat sci synl, inst met res, shenyang 110016, peoples r china.;lee, cs (reprint author), city univ hong kong, ctr super diamond & adv films cosdaf, hong kong, hong kong, peoples r china.;apcslee@cityu.edu.hk
关键词	Graphene Controllable Doping Tunable Band Gaps P-type Transport Properties Boron-doped Microwave Plasma Walled Carbon Nanotubes Ray Photoelectron-spectroscopy Field-effect Transistors High-quality Electronic-properties Epitaxial Graphene Films Transparent Deposition Oxide
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/60259
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. B. Tang,L. C. Yin,Y. Yang,et al. Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma[J]. Acs Nano,2012,6(3):1970-1978.
APA	Y. B. Tang.,L. C. Yin.,Y. Yang.,X. H. Bo.,Y. L. Cao.,...&C. S. Lee.(2012).Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma.Acs Nano,6(3),1970-1978.
MLA	Y. B. Tang,et al."Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma".Acs Nano 6.3(2012):1970-1978.