Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer

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	Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer
	P. F. Yan; K. Du; M. L. Sui
	2012
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	112 期号:8
摘要	Due to the special dislocation slip systems in hexagonal lattice, dislocation dominated deformations in hexagonal structured multilayers are significantly different from that in cubic structured systems. In this work, we have studied the strain relaxation mechanism in hexagonal structured InGaN/AlGaN/GaN multilayers with transmission electron microscopy. Due to lattice mismatch, the strain relaxation was found initiated with the formation of pyramidal dislocations. Such dislocations locally lie at only one preferential slip direction in the hexagonal lattice. This preferential slip causes a shear stress along the basal planes and consequently leads to dissociation of pyramidal dislocations and operation of the basal plane slip system. The compressive InGaN layers and "weak" AlGaN/InGaN interfaces stimulate the dissociation of pyramidal dislocations at the interfaces. These results enhance the understanding of interactions between dislocations and layer interfaces and shed new lights on deformation mechanism in hexagonal-lattice multilayers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759353]
部门归属	[yan, p. f.; du, k.] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [sui, m. l.] beijing univ technol, inst microstruct & property adv mat, beijing 100124, peoples r china.;yan, pf (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china.;kuidu@imr.ac.cn; mlsui@bjut.edu.cn
关键词	Quantum-well Structures Light-emitting-diodes Deformation Mechanisms Metallic Multilayers Thin-films Misfit Dislocations Ingan Epilayers Composites Interfaces Gan
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/60385
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	P. F. Yan,K. Du,M. L. Sui. Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer[J]. Journal of Applied Physics,2012,112(8).
APA	P. F. Yan,K. Du,&M. L. Sui.(2012).Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer.Journal of Applied Physics,112(8).
MLA	P. F. Yan,et al."Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer".Journal of Applied Physics 112.8(2012).