Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

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	Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma
	L. Zhang; J. H. Gao; J. Q. Xiao; L. S. Wen; J. Gong; C. Sun
	2012
发表期刊	Physica Status Solidi a-Applications and Materials Science
ISSN	1862-6300
卷号	209 期号:6 页码:1080-1084
摘要	Hydrogenated nanocrystalline silicon films (nc-Si:H) have been deposited by the decomposition of tetrachlorosilane (SiCl4) diluted with hydrogen (H2) and argon (Ar) by a plasma-enhanced chemical vapor deposition (PECVD) method. Basing on the structural characterization of nc-Si:H, we have found that Ar affects the growth of films deposited at two substrate temperatures (Ts?=?250 and 120 degrees C) in different ways. At Ts?=?250 degrees C, the Ar gas deteriorates the crystallinity of nc-Si:H, whereas, at Ts?=?120 degrees C, the crystallization of nc-Si:H films is promoted with increasing argon flow rate (Hf) from 10 to 30?sccm; however, the extremely high Ar dilution adversely affects the ordered structure of films. Meanwhile, the hydrogen concentration in the films is also controlled by Hf. Finally, the effects of Ar in the SiCl4/H2/Ar system have been discussed in related to the equilibrium of atomic hydrogen and ionized argon.
部门归属	[zhang, lin; gao, junhua; xiao, jinquan; wen, lishi; gong, jun; sun, chao] chinese acad sci, inst met res, state key lab corros & protect, shenyang 110016, peoples r china.;sun, c (reprint author), chinese acad sci, inst met res, state key lab corros & protect, shenyang 110016, peoples r china.;csun@imr.ac.cn
关键词	Hydrogen Concentration Microstructure Nanocrystalline Silicon Raman Spectra Chemical-vapor-deposition Low-temperature Growth Amorphous-silicon Microcrystalline Silicon Raman-spectroscopy Solar-cells Thin-films Chemistry Mechanism Kinetics
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文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/60441
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. Zhang,J. H. Gao,J. Q. Xiao,et al. Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma[J]. Physica Status Solidi a-Applications and Materials Science,2012,209(6):1080-1084.
APA	L. Zhang,J. H. Gao,J. Q. Xiao,L. S. Wen,J. Gong,&C. Sun.(2012).Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma.Physica Status Solidi a-Applications and Materials Science,209(6),1080-1084.
MLA	L. Zhang,et al."Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma".Physica Status Solidi a-Applications and Materials Science 209.6(2012):1080-1084.