Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization

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	Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization
	L. Zhang; J. H. Gao; J. Q. Xiao; L. S. Wen; J. Gong; C. Sun
	2012
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	258 期号:7 页码:3221-3226
摘要	Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared using diluted tetrachlorosilane (SiCl4) with various hydrogen flow rates (Hf) by plasma enhanced chemical vapor deposition (PECVD) at a constant substrate temperature (Ts) as low as 120 degrees C. Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), infrared spectra (IR) and spectroscopic ellipsometry (SE) were employed to investigate the microstructure and hydrogen bonding of the nc-Si: H films. Our results showed that the microstructure and hydrogen content of the films could be effectively tailored by the hydrogen flow rates, and a distinct transition from amorphous to nanocrystalline phase was observed with an increase of Hf. At an optimal preparation condition, a deposition rate was as high as 3.7 nm/min and the crystallinity reached up to 64.1%. In addition, the effect of hydrogen on the low-temperature growth of nc-Si:H film was proposed in relation to the surface reaction of radicals and the hydrogen diffusion in the surface growing region. (C) 2011 Elsevier B.V. All rights reserved.
部门归属	[zhang, l.; gao, j. h.; xiao, j. q.; wen, l. s.; gong, j.; sun, c.] chinese acad sci, state key lab corros & protect, inst met res, shenyang 110016, peoples r china.;sun, c (reprint author), chinese acad sci, state key lab corros & protect, inst met res, shenyang 110016, peoples r china.;csun@imr.ac.cn
关键词	Nanocrystalline Silicon Pecvd Microstructure Raman Spectra Hydrogenated Amorphous-silicon Thin-films Raman-spectroscopy Solar-cells Mechanism Sih2cl2
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/60442
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. Zhang,J. H. Gao,J. Q. Xiao,et al. Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization[J]. Applied Surface Science,2012,258(7):3221-3226.
APA	L. Zhang,J. H. Gao,J. Q. Xiao,L. S. Wen,J. Gong,&C. Sun.(2012).Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization.Applied Surface Science,258(7),3221-3226.
MLA	L. Zhang,et al."Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization".Applied Surface Science 258.7(2012):3221-3226.