IMR OpenIR
高密度脉冲电流处理对疲劳铜单晶位错结构的影响及其机制
肖素红
Subtype博士
Thesis Advisor周本濂 ; 李守新
2002
Degree Grantor中国科学院金属研究所
Document Type学位论文
Identifierhttp://ir.imr.ac.cn/handle/321006/65316
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
肖素红. 高密度脉冲电流处理对疲劳铜单晶位错结构的影响及其机制[D]. 中国科学院金属研究所,2002.
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