The heating behavior of LaNiO3 (LNO) films on SiO2/Si substrate heated by 2.45 GHz microwave irradiation in the microwave magnetic field was first investigated, and then amorphous Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on LNO-coated SiO2/Si substrates by a sol-gel method and crystallized in the microwave magnetic field. The crystalline phases and microstructures as well as the electrical properties of the PZT films were investigated as a function of the elevated temperature generated by microwave irradiation. The perovskite PZT films with a highly (100)-preferred orientation can be obtained by microwave annealing at 700 degrees C for only 180 s of total processing time, and have good electrical properties. The results demonstrated that conductive metal oxide LNO as a bottom electrode layer is an advantage for the crystallization of PZT thin films by microwave irradiation in the microwave magnetic field.
部门归属
[chen, y. n.
; wang, z. j.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.
; wang, zj (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china.
; wangzj@imr.ac.cn
Y. N. Chen,Z. J. Wang. Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on LaNiO3/SiO2/Si Substrates[J]. Journal of the American Ceramic Society,2013,96(1):90-95.
APA
Y. N. Chen,&Z. J. Wang.(2013).Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on LaNiO3/SiO2/Si Substrates.Journal of the American Ceramic Society,96(1),90-95.
MLA
Y. N. Chen,et al."Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on LaNiO3/SiO2/Si Substrates".Journal of the American Ceramic Society 96.1(2013):90-95.
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