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GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER
C. J. Dong; M. Xu; W. Lu; Q. Z. Huang
2013
Source PublicationSurface Review and Letters
ISSN0218-625X
Volume20Issue:2
AbstractInN film with an AlInN/AlN bilayer buffer was deposited on Si(111) substrate by radio frequency (RF) magnetron sputtering. X-ray diffraction and Raman spectroscopy measurements reveal that the InN film is of hexagonal wurtzite crystal structure with highly (0002) preferred orientation. An Al0.24In0.76N interface layer of about similar to 50 nm was con firmed by transmission electron microscopy (TEM) and further analyzed by X-ray photoelectron spectroscopy (XPS). The quality of this film is remarkably better than InN films grown directly on Si substrate or with only an AlN buffer, due to the effective accommodation of mismatch between the film and substrate. Our results will be very useful in the fabrication of applicable nitride microelectronic materials.
description.department[dong, c. j. ; xu, m. ; lu, w. ; huang, q. z.] southwest univ nationalities, key lab informat mat sichuan prov, chengdu 610041, peoples r china. [dong, c. j. ; xu, m. ; lu, w. ; huang, q. z.] southwest univ nationalities, coll elect & informat engn, chengdu 610041, peoples r china. [dong, c. j.] jilin univ, dept mat sci, changchun 130012, peoples r china. [xu, m.] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. ; xu, m (reprint author), southwest univ nationalities, key lab informat mat sichuan prov, chengdu 610041, peoples r china. ; hsuming_2001@yahoo.com.cn
KeywordThin Films Nitrides Sputtering Microstructure Chemical-vapor-deposition Molecular-beam Epitaxy Optical-properties Lattice-constants Phase Epitaxy Wurtzite Inn Thin-films Layers Spectroscopy Nitridation
URL查看原文
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/71188
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
C. J. Dong,M. Xu,W. Lu,et al. GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER[J]. Surface Review and Letters,2013,20(2).
APA C. J. Dong,M. Xu,W. Lu,&Q. Z. Huang.(2013).GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER.Surface Review and Letters,20(2).
MLA C. J. Dong,et al."GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER".Surface Review and Letters 20.2(2013).
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