GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER

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	GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER
	C. J. Dong; M. Xu; W. Lu; Q. Z. Huang
	2013
发表期刊	Surface Review and Letters
ISSN	0218-625X
卷号	20 期号:2
摘要	InN film with an AlInN/AlN bilayer buffer was deposited on Si(111) substrate by radio frequency (RF) magnetron sputtering. X-ray diffraction and Raman spectroscopy measurements reveal that the InN film is of hexagonal wurtzite crystal structure with highly (0002) preferred orientation. An Al0.24In0.76N interface layer of about similar to 50 nm was con firmed by transmission electron microscopy (TEM) and further analyzed by X-ray photoelectron spectroscopy (XPS). The quality of this film is remarkably better than InN films grown directly on Si substrate or with only an AlN buffer, due to the effective accommodation of mismatch between the film and substrate. Our results will be very useful in the fabrication of applicable nitride microelectronic materials.
部门归属	[dong, c. j. ; xu, m. ; lu, w. ; huang, q. z.] southwest univ nationalities, key lab informat mat sichuan prov, chengdu 610041, peoples r china. [dong, c. j. ; xu, m. ; lu, w. ; huang, q. z.] southwest univ nationalities, coll elect & informat engn, chengdu 610041, peoples r china. [dong, c. j.] jilin univ, dept mat sci, changchun 130012, peoples r china. [xu, m.] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. ; xu, m (reprint author), southwest univ nationalities, key lab informat mat sichuan prov, chengdu 610041, peoples r china. ; hsuming_2001@yahoo.com.cn
关键词	Thin Films Nitrides Sputtering Microstructure Chemical-vapor-deposition Molecular-beam Epitaxy Optical-properties Lattice-constants Phase Epitaxy Wurtzite Inn Thin-films Layers Spectroscopy Nitridation
URL	查看原文
语种	英语
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/71188
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	C. J. Dong,M. Xu,W. Lu,et al. GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER[J]. Surface Review and Letters,2013,20(2).
APA	C. J. Dong,M. Xu,W. Lu,&Q. Z. Huang.(2013).GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER.Surface Review and Letters,20(2).
MLA	C. J. Dong,et al."GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER".Surface Review and Letters 20.2(2013).