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Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils
Y. Gao; W. C. Ren; T. Ma; Z. B. Liu; Y. Zhang; W. B. Liu; L. P. Ma; X. L. Ma; H. M. Cheng
2013
Source PublicationAcs Nano
ISSN1936-0851
Volume7Issue:6Pages:5199-5206
AbstractAtomically thin hexagonal boron nitride (h-BN), as a graphene analogue, has attracted increasing interest because of many fascinating properties and a wide range of potential applications. However, it still remains a great challenge to synthesize high-quality h-BN with predetermined number of layers at a low cost. Here we reported the controlled growth of h-BN on polycrystalline Pt foils by low-cost ambient pressure chemical vapor deposition with ammonia borane as the precursor. Monolayer, bilayer and few-layer h-BN domains and large-area films were selectively obtained on Pt by simply changing the concentration of ammonia borane. Moreover, using a bubbling method, we have achieved the nondestructive transfer of h-BN from Pt to arbitrary substrates and the repeated use of the Pt for h-BN growth, which not only reduces environmental pollution but also decreases the production cost of h-BN. The monolayer and bilayer h-BN obtained are very uniform with high quality and smooth surfaces. In addition, we found that the optical band gap of h-BN increases with decreasing number of layers. The repeated growth of large-area, high-quality monolayer and bilayer h-BN films, together with the successful growth of graphene, opens up the possibility for creating various functional heterostructures for large-scale fabrication and Integration of novel electronics.
description.department[gao, yang ; ren, wencai ; ma, teng ; liu, zhibo ; liu, wen-bin ; ma, lai-peng ; ma, xiuliang ; cheng, hui-ming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [zhang, yu] chinese acad sci, shenyang inst automat, state key lab robot, shenyang 110016, peoples r china. ; ren, wc (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china. ; wcren@imr.ac.cn ; cheng@imr.ac.cn
KeywordHexagonal Boron Nitride Monolayer Bilayer Chemical Vapor Deposition Bubbling Transfer Chemical-vapor-deposition Single-crystal Graphene Electronics Optical-properties Films Nanosheets Ni(111)
URL查看原文
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/71222
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Y. Gao,W. C. Ren,T. Ma,et al. Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils[J]. Acs Nano,2013,7(6):5199-5206.
APA Y. Gao.,W. C. Ren.,T. Ma.,Z. B. Liu.,Y. Zhang.,...&H. M. Cheng.(2013).Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils.Acs Nano,7(6),5199-5206.
MLA Y. Gao,et al."Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils".Acs Nano 7.6(2013):5199-5206.
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