High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2 | |
H. H. Guo; T. Yang; P. Tao; Y. Wang; Z. D. Zhang | |
2013 | |
发表期刊 | Journal of Applied Physics
![]() |
ISSN | 0021-8979 |
卷号 | 113期号:1 |
摘要 | We systematically study the effect of high pressure on the structure, electronic structure, and transport properties of 2H-MoS2, based on first-principles density functional calculations and the Boltzmann transport theory. Our calculation shows a vanishing anisotropy in the rate of structural change at around 25 GPa, in agreement with the experimental data. A conversion from van der Waals to covalent-like bonding is seen. Concurrently, a transition from semiconductor to metal occurs at 25 GPa from band structure calculation. Our transport calculations also find pressure-enhanced electrical conductivities and significant values of the thermoelectric figure of merit over a wide temperature range. Our study supplies a new route to improve the thermoelectric performance of MoS2 and of other transition metal dichalcogenides by applying hydrostatic pressure. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772616] |
部门归属 | [guo, huaihong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. ; guo, hh (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china. ; yangteng@imr.ac.cn |
关键词 | X-ray-diffraction Augmented-wave Method Molybdenum-disulfide Diselenide Gpa |
URL | 查看原文 |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/71231 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | H. H. Guo,T. Yang,P. Tao,et al. High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2[J]. Journal of Applied Physics,2013,113(1). |
APA | H. H. Guo,T. Yang,P. Tao,Y. Wang,&Z. D. Zhang.(2013).High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2.Journal of Applied Physics,113(1). |
MLA | H. H. Guo,et al."High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2".Journal of Applied Physics 113.1(2013). |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论