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Effect of Carrier Waveform Frequency on the Microstructure of Al2O3 Plasma Electrolyic Oxidation Films
X. H. Guo; K. Q. Du; Q. Z. Guo; Y. Wang; F. H. Wang
2013
Source PublicationEcs Electrochemistry Letters
ISSN2162-8726
Volume2Issue:4Pages:C11-C14
AbstractDifferent microstructures of the Al2O3 plasma electrolytic oxidation (PEO) films were obtained by controlling the frequency of applied high- frequency square voltage waveform (HFSVW) under different transient self- feedback control (TSFC). The morphology and compactness of the PEO films were characterized by scanning electron microscopy (SEM) and electrochemical impedance spectroscopy (EIS). Experimental results indicated that uniform, compact, small-grained TSFC PEO films can be produced by applying high- frequency HFSVWs. (C) 2013 The Electrochemical Society. All rights reserved.
description.department[guo, xinghua ; du, keqin ; guo, quanzhong ; wang, yong ; wang, fuhui] chinese acad sci, inst met res, state key lab corros & protect, shenyang 110016, peoples r china. ; guo, xh (reprint author), chinese acad sci, inst met res, state key lab corros & protect, shenyang 110016, peoples r china. ; kqdu@imr.ac.cn
Keyword2024 Al-alloy Porous-electrodes Grain-growth Corrosion
URL查看原文
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/71237
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
X. H. Guo,K. Q. Du,Q. Z. Guo,et al. Effect of Carrier Waveform Frequency on the Microstructure of Al2O3 Plasma Electrolyic Oxidation Films[J]. Ecs Electrochemistry Letters,2013,2(4):C11-C14.
APA X. H. Guo,K. Q. Du,Q. Z. Guo,Y. Wang,&F. H. Wang.(2013).Effect of Carrier Waveform Frequency on the Microstructure of Al2O3 Plasma Electrolyic Oxidation Films.Ecs Electrochemistry Letters,2(4),C11-C14.
MLA X. H. Guo,et al."Effect of Carrier Waveform Frequency on the Microstructure of Al2O3 Plasma Electrolyic Oxidation Films".Ecs Electrochemistry Letters 2.4(2013):C11-C14.
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