The lattice distortion-induced topological insulating phase in bulk HgTe from first-principles

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	The lattice distortion-induced topological insulating phase in bulk HgTe from first-principles
	H. P. Han; Y. M. Zhang; G. Y. Gao; K. L. Yao
	2013
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	153 期号:1 页码:31-34
摘要	A series of calculations are carried out to investigate the electronic band structure of bulk HgTe strained in ab-plane with the assumption of the relaxed-volume and the constant-volume by means of the full potential linearized augmented plane-wave method. Our results show that there is a topological insulating phase induced by the lattice distortions, which is in agreement with previous theoretical and experimental results. Importantly, the distortion-induced band gap is larger than 0.3 eV in either expansion or compression in ab-plane. It is indicated that the bulk HgTe under proper lattice distortions would be possibly made the room temperature application for spintronic devices with low energy consumption. (C) 2012 Elsevier Ltd. All rights reserved.
部门归属	[han, hongpei ; gao, g. y. ; yao, k. l.] huazhong univ sci & technol, sch phys, wuhan 430074, peoples r china. [han, hongpei ; gao, g. y. ; yao, k. l.] huazhong univ sci & technol, wuhan natl high magnet field ctr, wuhan 430074, peoples r china. [han, hongpei ; zhang, yuanmin] xuchang univ, coll electroinformat engn, xuchang 461000, peoples r china. [yao, k. l.] chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. ; han, hp (reprint author), huazhong univ sci & technol, sch phys, wuhan 430074, peoples r china. ; hhp102@163.com ; klyao@mail.hust.edu.cn
关键词	Topological Insulator First-principles Lattice Distortions Spintronic Devices Single Dirac Cone Surface Bi2te3
URL	查看原文
语种	英语
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/71243
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. P. Han,Y. M. Zhang,G. Y. Gao,et al. The lattice distortion-induced topological insulating phase in bulk HgTe from first-principles[J]. Solid State Communications,2013,153(1):31-34.
APA	H. P. Han,Y. M. Zhang,G. Y. Gao,&K. L. Yao.(2013).The lattice distortion-induced topological insulating phase in bulk HgTe from first-principles.Solid State Communications,153(1),31-34.
MLA	H. P. Han,et al."The lattice distortion-induced topological insulating phase in bulk HgTe from first-principles".Solid State Communications 153.1(2013):31-34.