Effects of Zn addition on electromigration behavior of Sn-1Ag-0.5Cu solder interconnect | |
H. Y. Liu; Q. S. Zhu; Z. G. Wang; J. D. Guo; J. K. Shang | |
2013 | |
发表期刊 | Journal of Materials Science-Materials in Electronics
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ISSN | 0957-4522 |
卷号 | 24期号:1页码:211-216 |
摘要 | Effects of electromigration on microstructure and tensile property were studied in the Sn-1Ag-0.5Cu and Sn-1Ag-0.5Cu-1Zn solder interconnects. While the polarity effect and strength reduction from electromigration occurred in the Sn-1Ag-0.5Cu solder interconnects, they were suppressed by the Zn addition in the Sn-1Ag-0.5Cu-1Zn solder interconnects. Such a strong effect of Zn was explained by the strong binding of Zn with Cu, which prevented the dissolution of the IMC at the cathode, and by the reverse migration of the Zn elements, which counteracted the increase in the vacancy concentration so that the strength reduction was successfully inhibited. |
部门归属 | [liu, h. y. ; zhu, q. s. ; wang, z. g. ; guo, j. d. ; shang, j. k.] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [shang, j. k.] univ illinois, dept mat sci & engn, urbana, il 61801 usa. ; zhu, qs (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. ; qszhu@imr.ac.cn |
关键词 | Intermetallic Compound Formation Sn-3.8ag-0.7cu Solder Cu Microstructure Joints |
URL | 查看原文 |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/71367 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | H. Y. Liu,Q. S. Zhu,Z. G. Wang,et al. Effects of Zn addition on electromigration behavior of Sn-1Ag-0.5Cu solder interconnect[J]. Journal of Materials Science-Materials in Electronics,2013,24(1):211-216. |
APA | H. Y. Liu,Q. S. Zhu,Z. G. Wang,J. D. Guo,&J. K. Shang.(2013).Effects of Zn addition on electromigration behavior of Sn-1Ag-0.5Cu solder interconnect.Journal of Materials Science-Materials in Electronics,24(1),211-216. |
MLA | H. Y. Liu,et al."Effects of Zn addition on electromigration behavior of Sn-1Ag-0.5Cu solder interconnect".Journal of Materials Science-Materials in Electronics 24.1(2013):211-216. |
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