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Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors
Y. Su; J. H. Du; D. M. Sun; C. Liu; H. M. Cheng
2013
Source PublicationNano Research
ISSN1998-0124
Volume6Issue:11Pages:842-852
AbstractAn inkjet-printed graphene film is of great importance for next-generation flexible, low cost and high performance electronic devices. However, due to the limitation of the inkjet printing process, the electrical conductivity of inkjet-printed graphene films is limited to similar to 10 S center dot cm(-1), and achieving a high conductivity of the printed graphene films remains a big challenge. Here, we develop a "weak oxidation-vigorous exfoliation" strategy to tailor graphene oxide (GO) for meeting all the requirements of highly conductive inkjet-printed graphene films, including a more intact carbon plane and suitable size. The pi-conjugated structure of the resulting graphene has been restored to a high degree, and its printed films show an ultrahigh conductivity of similar to 420 S center dot cm(-1), which is tens of times higher than previously reported results, suggesting that, aside from developing a highly efficient reduction method, tuning the GO structure could be an alternative way to produce high quality graphene sheets. Using inkjet-printed graphene patterns as source/drain/gate electrodes, and semiconducting single-walled carbon nanotubes (SWCNTs) as channels, we fabricated an all-carbon field effect transistor which shows excellent performance (an on/off ratio of similar to 10(4) and a mobility of similar to 8 cm(2)center dot V-1 center dot s(-1)) compared to previously reported CNT-based transistors, promising the use of nanocarbon materials, graphene and SWCNTs in printed electronics, especially where high performance and flexibility are needed.
description.department[su, yang ; du, jinhong ; sun, dongming ; liu, chang ; cheng, huiming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. ; cheng, hm (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china. ; cheng@imr.ac.cn
KeywordInkjet Printing Graphene Oxide High Conductivity Field Effect Transistor Graphite Oxide High-resolution Raman-spectra Films Reduction Electrodes Sheets Stability Circuits Band
URL查看原文
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/71474
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Y. Su,J. H. Du,D. M. Sun,et al. Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors[J]. Nano Research,2013,6(11):842-852.
APA Y. Su,J. H. Du,D. M. Sun,C. Liu,&H. M. Cheng.(2013).Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors.Nano Research,6(11),842-852.
MLA Y. Su,et al."Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors".Nano Research 6.11(2013):842-852.
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