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The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature
X. Tan; X. Peng; F. Wang
2013
Source PublicationSurface & Coatings Technology
ISSN0257-8972
Volume224Pages:62-70
AbstractA CeO2 dispersed delta-Ni2Al3 was formed by partially aluminizing an electrodeposited Ni film containing CeO2. The aluminide/Ni-CeO2 coating system itself quickly formed a CeO2-rich diffusion barrier between aluminide and Ni during annealing in vacuum at 1000 degrees C. A model for the formation of the diffusion barrier was proposed, based on the characterization of the evolution with time of the phase compositions of the aluminide at the interface. (C) 2013 Elsevier B.V. All rights reserved.
description.department[tan, x. ; peng, x. ; wang, f.] chinese acad sci, inst met res, state key lab corros & protect, shenyang 110016, peoples r china. ; peng, x (reprint author), chinese acad sci, inst met res, state key lab corros & protect, 62 wencui rd, shenyang 110016, peoples r china. ; xpeng@imr.ac.cn
KeywordAluminide Coating Annealing Diffusion Barrier Electroplating Interdiffusion Single-crystal Superalloy Chemical-vapor-deposition Ni-base Superalloys Gas-turbine Blades Oxidation Behavior Resistant Coatings Alloy-steels Degrees-c Interdiffusion Platinum
URL查看原文
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/71489
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
X. Tan,X. Peng,F. Wang. The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature[J]. Surface & Coatings Technology,2013,224:62-70.
APA X. Tan,X. Peng,&F. Wang.(2013).The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature.Surface & Coatings Technology,224,62-70.
MLA X. Tan,et al."The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature".Surface & Coatings Technology 224(2013):62-70.
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