Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene

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	Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene
	L. Wang; Y. Wang; X. L. Chen; W. Zhu; C. Zhu; Z. F. Wu; Y. Han; M. W. Zhang; W. Li; Y. H. He; W. Xiong; K. T. Law; D. S. Su; N. Wang
	2013
发表期刊	Scientific Reports
ISSN	2045-2322
卷号	3
摘要	We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.
部门归属	[wang, lin ; wang, yang ; chen, xiaolong ; zhu, chao ; wu, zefei ; han, yu ; zhang, mingwei ; li, wei ; he, yuheng ; xiong, wei ; law, kam tuen ; wang, ning] hong kong univ sci & technol, dept phys, hong kong, hong kong, peoples r china. [wang, lin ; wang, yang ; chen, xiaolong ; zhu, chao ; wu, zefei ; han, yu ; zhang, mingwei ; li, wei ; he, yuheng ; xiong, wei ; law, kam tuen ; wang, ning] hong kong univ sci & technol, william mong inst nano sci & technol, hong kong, hong kong, peoples r china. [zhu, wei] calif state univ northridge, dept phys & astron, northridge, ca 91330 usa. [su, dangsheng] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. ; wang, n (reprint author), hong kong univ sci & technol, dept phys, hong kong, hong kong, peoples r china. ; phwang@ust.hk
关键词	2-dimensional Electron Yttrium-oxide Compressibility Transport Fermions Gas
URL	查看原文
语种	英语
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/71539
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. Wang,Y. Wang,X. L. Chen,et al. Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene[J]. Scientific Reports,2013,3.
APA	L. Wang.,Y. Wang.,X. L. Chen.,W. Zhu.,C. Zhu.,...&N. Wang.(2013).Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene.Scientific Reports,3.
MLA	L. Wang,et al."Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene".Scientific Reports 3(2013).