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Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
M. H. Wang; H. Lei; Y. Seki; S. Seki; Y. Sawada; Y. Hoshi; S. H. Wang; L. X. Sun
2013
Source PublicationJournal of Thermal Analysis and Calorimetry
ISSN1388-6150
Volume111Issue:2Pages:1457-1461
AbstractPartly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. XRD analysis revealed that appropriate water vapor could suppress the film's crystallinity. In situ thermal crystallization process was monitored by high-temperature XRD. The crystallization data were analyzed using the Kolmogorov-Johnson-Mehl-Avrami equation. The kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. The activation energy of crystallization for film deposited under 1 x 10(-5) Torr water vapor pressure was determined to be 30.7 kJ mol(-1), which is higher than 18.9 kJ mol(-1) for film deposited in the absence of water vapor. The increased activation energy caused by the chemically bonded hydrogen and embedded O-H bonds from the water vapor resulted in the suppression of crystallization. Introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of Hall mobility. The resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects.
description.department[wang, meihan ; wang, shaohong] shenyang univ, ctr sci res, shenyang 110044, peoples r china. [lei, hao] chinese acad sci, inst met res, dept surface engn mat, shenyang 110016, peoples r china. [seki, yoshiyuki ; sawada, yutaka ; hoshi, yoichi] tokyo polytech univ, ctr hyper media res, atsugi, kanagawa 2430297, japan. [seki, shigeyuki] sendai natl coll technol, dept elect engn, aoba ku, sendai, miyagi 9893128, japan. [sun, lixian] chinese acad sci, dalian inst chem phys, mat & thermochem lab, dalian 116023, peoples r china. ; wang, mh (reprint author), shenyang univ, ctr sci res, 21 wanghua s st, shenyang 110044, peoples r china. ; wangmhdicp@yahoo.com.cn
KeywordPartly Crystallized Amorphous Io Film Water Vapor Thermal Crystallization Kinetic Electrical Properties Tin-oxide Microstructures
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Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/71545
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
M. H. Wang,H. Lei,Y. Seki,et al. Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor[J]. Journal of Thermal Analysis and Calorimetry,2013,111(2):1457-1461.
APA M. H. Wang.,H. Lei.,Y. Seki.,S. Seki.,Y. Sawada.,...&L. X. Sun.(2013).Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor.Journal of Thermal Analysis and Calorimetry,111(2),1457-1461.
MLA M. H. Wang,et al."Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor".Journal of Thermal Analysis and Calorimetry 111.2(2013):1457-1461.
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