Electrical Conduction and Dielectric Properties of the Rb-doped CaCu3Ti4O12 | |
Z. Yang; Y. Zhang; Z. H. Lu; K. Zhang; R. Xiong; J. Shi | |
2013 | |
Source Publication | Journal of the American Ceramic Society
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ISSN | 0002-7820 |
Volume | 96Issue:3Pages:806-811 |
Abstract | Ca1-xRbxCu3Ti4O12 (x=0, 0.03, and 0.05) ceramics were synthesized by the sol-gel method. Their microstructure and electrical properties were investigated. In the Rb-doped samples, the Cu-rich and Ti-poor grain-boundary layers are formed, and electrical properties are also changed by doping: With the increase in doping concentration, the grain resistivity and the grain-boundary Schottky potential barrier are changed, the grain-boundary resistivity is enhanced, and the low-frequency dielectric constants and loss are reduced. These results were discussed in terms of the internal barrier layer capacitor (IBLC) mechanism, particularly focusing on the electrical properties in grains and the cationic nonstoichiometry at grain boundaries. |
description.department | [yang, zhi ; zhang, kun ; xiong, rui ; shi, jing] wuhan univ, key lab artificial micro & nanostruct, minist educ, wuhan 430072, peoples r china. [yang, zhi ; zhang, kun ; xiong, rui ; shi, jing] wuhan univ, sch phys & technol, wuhan 430072, peoples r china. [zhang, yue] huazhong univ sci & technol, sch opt & elect informat, wuhan 430074, peoples r china. [lu, zhihong] wuhan univ sci & technol, sch met & mat, wuhan 430074, peoples r china. [xiong, rui ; shi, jing] hubei univ, minist educ, key lab green preparat & applicat funct mat, wuhan 430062, peoples r china. [shi, jing] acad sinica, int ctr mat phys, shenyang 110015, peoples r china. ; zhang, y (reprint author), huazhong univ sci & technol, sch opt & elect informat, wuhan 430074, peoples r china. ; yue-zhang@hust.edu.cn ; xiongrui1967@163.com |
Keyword | Constant Material Cacu3ti4o12 Cu-stoichiometry Copper-titanate Ceramics Behavior |
URL | 查看原文 |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/71642 |
Collection | 中国科学院金属研究所 |
Recommended Citation GB/T 7714 | Z. Yang,Y. Zhang,Z. H. Lu,et al. Electrical Conduction and Dielectric Properties of the Rb-doped CaCu3Ti4O12[J]. Journal of the American Ceramic Society,2013,96(3):806-811. |
APA | Z. Yang,Y. Zhang,Z. H. Lu,K. Zhang,R. Xiong,&J. Shi.(2013).Electrical Conduction and Dielectric Properties of the Rb-doped CaCu3Ti4O12.Journal of the American Ceramic Society,96(3),806-811. |
MLA | Z. Yang,et al."Electrical Conduction and Dielectric Properties of the Rb-doped CaCu3Ti4O12".Journal of the American Ceramic Society 96.3(2013):806-811. |
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