Effect of grain boundary on electrical properties of polycrystalline lanthanum nickel oxide thin films

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IMR OpenIR > 中国科学院金属研究所 > 期刊论文

题名:	Effect of grain boundary on electrical properties of polycrystalline lanthanum nickel oxide thin films
作者:	M. W. Zhu; Z. J. Wang; Y. N. Chen; H. L. Wang; Z. D. Zhang
发表日期:	2013
刊名:	Applied Physics a-Materials Science & Processing
相关网址:	<Go to ISI>://WOS:000322670700028
Appears in Collections:	中国科学院金属研究所_期刊论文

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Recommended Citation:

M. W. Zhu,Z. J. Wang,Y. N. Chen,et al. Effect Of Grain Boundary On Electrical Properties Of Polycrystalline Lanthanum Nickel Oxide Thin Films[J]. Applied Physics A-materials Science & Processing,2013,112(4):1011-1018.

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