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电流密度对直流电解沉积纳米孪晶Cu微观结构的影响
金帅; 潘庆松; 卢磊
2013-05-11
Source Publication金属学报
Issue5Pages:635-640
Abstract采用直流电解沉积技术,制备出具有高密度择优取向的纳米孪晶结构块体Cu样品.样品由微米级柱状晶粒构成,晶粒内有高密度的平行于生长基面的共格孪晶界面.研究发现,电流密度对于纳米孪晶Cu的晶粒尺寸有明显影响,但对其织构和孪晶片层厚度影响不大.当电流密度从10 mA/cm~2增加到30 mA/cm~2,纳米孪晶Cu的平均晶粒尺寸从10.1μm减小到4.2um,孪晶片层厚度为30-50 nm.其原因是随电流密度的增加,阴极的过电位增大,从而使晶粒细化.
description.department中国科学院金属研究所沈阳材料科学国家(联合)实验室
KeywordCu 直流电解沉积 电流密度 纳米孪晶 晶粒尺寸
Language中文
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/71841
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
金帅,潘庆松,卢磊. 电流密度对直流电解沉积纳米孪晶Cu微观结构的影响[J]. 金属学报,2013(5):635-640.
APA 金帅,潘庆松,&卢磊.(2013).电流密度对直流电解沉积纳米孪晶Cu微观结构的影响.金属学报(5),635-640.
MLA 金帅,et al."电流密度对直流电解沉积纳米孪晶Cu微观结构的影响".金属学报 .5(2013):635-640.
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