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放电气体对ECR-PECVD法制备微晶硅薄膜的影响
程华; 钱永产; 薛军; 吴爱民; 石南林
2013-06-25
Source Publication材料研究学报
Issue3Pages:307-311
Abstract用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)法制备微晶硅薄膜,研究了放电气体对薄膜沉积速率、薄膜中H含量、择优取向和结晶度的影响。结果表明,以Ar作为放电气体时薄膜沉积速率比以H2作为放电气体时高1.5—2倍,但是薄膜的结晶度较低;以Ar作为放电气体时薄膜的H含量比以H2作为放电气体时的薄膜低;放电气体对薄膜的择优取向和晶粒度没有显著的影响。
description.department中国科学院金属研究所 ; 中国人民解放军装甲兵技术学院 ; 大连理工大学
Keyword材料合成与加工工艺 微晶硅薄膜 Ecr-pecvd 放电气体
Language中文
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/71858
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
程华,钱永产,薛军,等. 放电气体对ECR-PECVD法制备微晶硅薄膜的影响[J]. 材料研究学报,2013(3):307-311.
APA 程华,钱永产,薛军,吴爱民,&石南林.(2013).放电气体对ECR-PECVD法制备微晶硅薄膜的影响.材料研究学报(3),307-311.
MLA 程华,et al."放电气体对ECR-PECVD法制备微晶硅薄膜的影响".材料研究学报 .3(2013):307-311.
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