IMR OpenIR
阳极电沉积制备二氧化硅薄膜初探
江亮亮; 胡吉明; 张鉴清等
2012
Conference Name中国化学会第28届学术年会
Source Publication中国化学会第28届学术年会论文集
Pages1-1
Conference Date2012
Abstract利用阴极极化提高基体附近水溶液中的pH值,能够有效促进硅烷sol-gel体系在电极表面的沉积成膜[1]。由于此方法操作简单、对基体要求低、薄膜与基体结合力好等优点,一经提出便在sol-gel薄膜的制备中得到光泛关注[2-5]。
description.department浙江大学化学系,杭州,310027 ; 浙江大学化学系,杭州,310027 ; 中国科学院金属研究所,腐蚀防护国家重点实验室,沈阳,110026
KeywordSol-gel体系 二氧化硅 阳极电沉积
Language中文
Document Type会议论文
Identifierhttp://ir.imr.ac.cn/handle/321006/72001
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
江亮亮,胡吉明,张鉴清等. 阳极电沉积制备二氧化硅薄膜初探[C],2012:1-1.
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